Product Name: Ultra-High Purity Semiconductor Ceramic Sleeve
Product Material: High-Purity Alumina ($Al_2O_3 \ge 99.8\%$), Sintered Silicon Carbide (SSiC), Aluminum Nitride (AlN), or High-Purity Quartz.
Material Characteristics: Ultra-high purity (minimal metallic impurities), Excellent resistance to plasma erosion (fluorine/chlorine-based), Exceptional dielectric strength, Vacuum-tight with zero porosity, Low coefficient of thermal expansion, High thermal conductivity (for AlN/SiC grades), Minimal outgassing.
Application Fields: Plasma etch chamber insulators, Wafer lift pin sleeves, Gas distribution system bushings, Ion implantation beamline liners, Thermal couple protection in diffusion furnaces, MOCVD reactor components, Electrostatic chuck (ESC) peripheral sleeves.
Application Industries: Broad Semiconductor (Front-end wafer fabrication), Electronic Engineering (Power device manufacturing), New Energy (Advanced solar cell processing), Aerospace (High-precision sensors).
Processing Difficulties: Achieving stringent surface cleanliness (Class 10/100 cleanroom standards), Controlling metallic ion contamination (e.g., Na, K, Fe) to ppb levels, Managing micron-level geometric tolerances on thin-walled components, Achieving atomic-level surface smoothness to prevent particle generation during plasma exposure.
Processing Flow: Ultra-pure powder preparation → Clean-room Isostatic Pressing → Precision Green Machining → High-purity sintering (Atmosphere controlled) → Diamond precision grinding → Chemical etching (to remove surface damage layers) → Ultrasonic deionized water cleaning → Class 100 cleanroom inspection & vacuum packaging.
Delivery Period: Standard specifications: 25-40 days,
Designed specifically for the rigorous environment of wafer fabrication, our Semiconductor Ceramic Sleeves provide the ultimate barrier against contamination and thermal stress. Whether used in plasma etching or high-temperature diffusion, these sleeves ensure that critical process parameters are maintained without shedding particles or leaching trace metals. By utilizing specialized high-density sintering techniques, we provide components that resist the aggressive chemical attacks of fluorine and chlorine gases, significantly extending the maintenance cycles of the process chamber and ensuring high yields for sensitive node technologies.
Key Features:
Contamination Control: Manufactured with high-purity materials to ensure zero trace-metal interference with silicon wafers.
Plasma Erosion Resistance: Optimized microstructure provides superior longevity in aggressive RF plasma environments.
Vacuum Stability: High-density, non-porous body ensures zero outgassing and maintains hermetic chamber integrity.
Thermal Management: Available in high-thermal-conductivity grades (AlN/SiC) for precise temperature control during processing.
Precision Surface Integrity: Special surface treatments minimize micro-cracks, reducing the risk of particle generation (flaking).
